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Transistor
2SC2295
Silicon NPN epitaxial planer type
For high-frequency amplification Complementary to 2SA1022
Unit: mm
s Features
q q q
2.8 -0.3 0.650.15
+0.2
1.5 -0.05
+0.25
0.650.15
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO CEBO IC PC Tj Tstg
30 20 5 30 200 150 -55 ~ +150
V V V mA mW C C
1:Base 2:Emitter 3:Collector
JEDEC:TO-236 EIAJ:SC-59 Mini Type Package
Marking symbol : V
s Electrical Characteristics
Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance
(Ta=25C)
Symbol ICBO hFE* fT NF Zrb Cre Conditions VCB = 10V, IE = 0 VCB = 10V, IE = -1mA VCB = 10V, IE = -1mA, f = 200MHz VCB = 10V, IE = -1mA, f = 5MHz VCB = 10V, IE = -1mA, f = 2MHz VCE = 10V, IC = 1mA, f = 10.7MHz 70 150 250 2.8 22 0.9 4 50 1.5 min typ max 0.1 220 MHz dB pF Unit A
*h
FE
Rank classification
Rank hFE Marking Symbol B 70 ~ 140 VB C 110 ~ 220 VC
0 to 0.1
Ratings
Unit
0.1 to 0.3 0.40.2
0.8
(Ta=25C)
1.1 -0.1
0.16 -0.06
+0.2
+0.1
0.4 -0.05
Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.95
2.9 -0.05
1
1.90.2
+0.2
0.95
3
+0.1
1.45
1
Transistor
PC -- Ta
250 12 Ta=25C 225 10 IB=100A 12.5
2SC2295
IC -- VCE
15.0 VCE=10V Ta=25C
IC -- I B
Collector power dissipation PC (mW)
Collector current IC (mA)
175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140
8
80A
Collector current IC (mA)
18
200
10.0
6
60A
7.5
4
40A
5.0
2
20A
2.5
0 0 6 12
0 0 20 40 60 80 100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (A)
IB -- VBE
120 VCE=10V Ta=25C 100 50 60
IC -- VBE
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 VCE=10V
VCE(sat) -- IC
IC/IB=10
Collector current IC (mA)
Base current IB (A)
80
40 Ta=75C 30
25C
-25C
60
Ta=75C 25C
40
20
0.1 -25C 0.03 0.01 0.1
20
10
0 0 0.2 0.4 0.6 0.8 1.0
0 0 0.4 0.8 1.2 1.6 2.0
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE -- IC
240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 - 0.1 - 0.3
fT -- I E
60
Zrb -- IE
Reverse transfer impedance Zrb ()
VCB=10V f=100MHz Ta=25C VCB=10V f=2MHz Ta=25C
Forward current transfer ratio hFE
200
Transition frequency fT (MHz)
50
160
Ta=75C 25C
40
120 -25C 80
30
20
40
10
0.3
1
3
10
30
100
-1
-3
-10
-30
-100
0 - 0.1
- 0.3
-1
-3
-10
Collector current IC (mA)
Emitter current IE (mA)
Emitter current IE (mA)
2
Transistor
Cre -- VCE
Common emitter reverse transfer capacitance Cre (pF)
3.0 f=10.7MHz Ta=25C 2.5 10 12 VCB=6V f=100MHz Rg=50 Ta=25C
2SC2295
NF -- IE
24 Vie=gie+jbie VCE=10V
bie -- gie
Input susceptance bie (mS)
20 -4mA 16
IE=-1mA
-7mA 100
2.0 IC=3mA 1.5 1mA
Noise figure NF (dB)
8
-2mA
58
6
12
1.0
4
8
0.5
2
4
f=10.7MHz
0 0.1
0.3
1
3
10
30
100
0 - 0.1
0 - 0.3 -1 -3 -10 0 8 16 24 32 40
Collector to emitter voltage VCE (V)
Emitter current IE (mA)
Input conductance gie (mS)
bre -- gre
0
bfe -- gfe
Forward transfer susceptance bfe (mS)
f=10.7MHz 0
- 0.1mA f=10.7MHz 58
boe -- goe
1.2
10.7
Reverse transfer susceptance bre (mS)
yre=gre+jbre VCE=10V
-1mA 100
yoe=goe+jboe VCE=10V
- 0.1 IE=-1mA
-20
58 -2mA 100
Output susceptance boe (mS)
1.0
- 0.2
-40
0.8
IE=-1mA 100
- 0.3
58
-60
IE=-4mA 100 58
0.6 58 0.4
- 0.4
100
-80
- 0.5
-100 yfe=gfe+jbfe VCE=10V
0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5
- 0.6 - 0.5
-120 - 0.4 - 0.3 - 0.2 - 0.1 0 0 20 40 60 80 100
Reverse transfer conductance gre (mS)
Forward transfer conductance
gfe (mS)
Output conductance goe (mS)
3

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